CMS06 datasheet(1/5 Pages) TOSHIBA

부품명	CMS06

상세설명	Switching Mode Power Supply Applications

PDF	5 Pages

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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CMS06

2006-11-13

1

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

CMS06

Switching Mode Power Supply Applications

Portable Equipment Battery Applications

• Forward voltage: VFM = 0.37 V (max)

• Average forward current: IF (AV) = 2.0 A

• Repetitive peak reverse voltage: VRRM = 30 V

• Suitable for compact assembly due to small surface-mount package

“M−FLATTM” (Toshiba package name)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

VRRM

30

V

Average forward current

IF (AV)

2.0

(Note 1)

A

Peak one cycle surge forward current

(non-repetitive)

IFSM

40 (50 Hz)

A

Junction temperature

Tj

−40~125

°C

Storage temperature

Tstg

−40~150

°C

Note 1: Tℓ

= 82.8°C: Rectangular waveform (α = 180°), VR = 15 V

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

VFM (1)

IFM = 0.5 A

⎯

0.26

⎯

VFM (2)

IFM = 1.0 A

⎯

0.28

⎯

Peak forward voltage

VFM (3)

IFM = 2.0 A

⎯

0.32

0.37

V

IRRM

VRRM = 5 V

⎯

0.09

⎯

Repetitive peak reverse current

IRRM

VRRM = 30 V

⎯

1.4

3.0

mA

Junction capacitance

Cj

VR = 10 V, f = 1.0 MHz

⎯

130

⎯

pF

Device mounted on a ceramic board

(soldering land: 2 mm

× 2 mm)

⎯

60

Thermal resistance

Rth (j-a)

Device mounted on a glass-epoxy

board

(soldering land: 6 mm

× 6 mm)

⎯

135

°C/W

Thermal resistance

Rth (j-ℓ)

⎯

16

°C/W

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

3-4E1A

Weight: 0.023 g (typ.)

유사한 부품 번호 - CMS06

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	CMS06	118Kb / 5P	TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
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Comchip Technology	CMS06P10V8-HF	547Kb / 6P	MOSFET REV:A
Toshiba Semiconductor	CMS06	168Kb / 5P	TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

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