4409

1

P-Channel Enhancement-Mode MOSFET (-30V, -12A)

PRODUCT SUMMARY

VDSS

ID

RDS(on) (m-ohm) Max

12 @ VGS = -10V ,ID=-12A

-30V

-12A

15 @ VGS = -4.5V ,ID=-10A

Features

· Advanced Trench Process Technology

· High Density Cell Design for Ultra Low On-Resistance

· Lead free product is acquired

Absolute Maximum Ratings (T

A=25

oC, unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

Drain Current @TA=25

oC

-12

A

ID

IDM

Drain Current (Pulsed)

a

-60

A

IAR

Avalanche Current

30

A

EAR

Repetitive Avalanche Energy L=0.3mH

135

mJ

Total Power Dissipation @TA=25

oC

3

PD

Total Power Dissipation @TA=75

oC

2.1

W

IS

Maximum Diode Forward Current

-2.1

A

Tj, Tstg

Operating Junction and Storage Temperature Range

-55 to +150

°C

RqJA

Thermal Resistance Junction to Ambient (PCB mounted)

b

50

°C/W

a: Repetitive Rating: Pulse width limited by the maximum junction temperation.

b: 1-in

2 2oz Cu PCB board

·

Pin 1 / 2 / 3: Source

Pin 4: Gate

Pin 5 / 6 / 7 / 8: Drain

SOP-8

Shenzhen Tuofeng Semiconductor Technology co., LTD