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TC7SH00FE 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 TC7SH00FE
상세설명  2 Input NAND Gate
PDF  5 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SH00FE 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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TC7SH00FE
2004-06-21
1
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SH00FE
2 Input NAND Gate
Features
Weight: 0.003 g (typ.)
• Super high speed operation :tPD = 3.7 ns (typ.)
@VCC = 5 V
• Low power dissipation : ICC = 2 µA (Max.)
@ Ta = 25°C
• High noise immunity : VNIH = VNIH
= 28% VCC (Min.)
• 5.5V tolerant input.
• Wide operation voltage range : VCC (opr) = 2~5.5 V
Marking
Pin Assignment (top view)
1
2
VCC
5
4
3
Type name
H
1
IN B
IN A
GND
OUT Y
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5~7
V
DC input voltage
VIN
−0.5~7
V
DC output voltage
VOUT
−0.5~VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
150
mW
Storage temperature
Tstg
−65~150
°C


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