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DF2S6.2FS 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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DF2S6.2FS 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 3 page ![]() DF2S6.2FS 2007-11-01 2 Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) ± 30 kV Criterion: No damage to device elements Marking Equivalent Circuit (Top View) 6 IZ - VZ 0 0 0 1 10 100 0246 8 0.01 Ta=25°C 0.1 0.001 ZENER VOLTAGE VZ (V) CT - VR 1 10 100 02 46 8 f=1MHz Ta=25°C REVERSE VOLTAGE VR(V) |
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