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TLP3021 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 TLP3021
상세설명  OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY
PDF  6 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP3021 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  TLP3021 Datasheet HTML 1Page - Toshiba Semiconductor TLP3021 Datasheet HTML 2Page - Toshiba Semiconductor TLP3021 Datasheet HTML 3Page - Toshiba Semiconductor TLP3021 Datasheet HTML 4Page - Toshiba Semiconductor TLP3021 Datasheet HTML 5Page - Toshiba Semiconductor TLP3021 Datasheet HTML 6Page - Toshiba Semiconductor  
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TLP3021(S),TLP3022(S),TLP3023(S)
2007-10-01
2
Absolute Maximum Ratings (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
IF
50
mA
Forward Current Derating (Ta≥53°C)
∆IF /°C
−0.7
mA /°C
Peak Forward Current (100μs pulse, 100pps)
IFP
1
A
Power Dissipation
PD
100
mW
Power Dissipation Derating (Ta≥25°C)
∆PD /°C
-1.0
mW/°C
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
Off-State Output Terminal Voltage
VDRM
400
V
Ta=25°C
100
On-State RMS Current
Ta=70°C
IT(RMS)
50
mA
On-State Current Derating (Ta≥25°C)
∆IT/°C
-1.1
mA /°C
Peak On-State Current (100μs pulse, 120pps)
ITP
2
A
Peak Nonrepetitive Surge Current (Pw=10ms,DC=10%)
ITSM
1.2
A
Power Dissipation
PD
300
mW
Power Dissipation Derating (Ta≥25°C)
∆PD /°C
-4.0
mW/°C
Junction Temperature
Tj
115
°C
Storage Temperature Range
Tstg
−55~150
°C
Operating Temperature Range
Topr
−40~100
°C
Lead Soldering Temperature (10s)
Tsol
260
°C
Total Package Power Dissipation
PT
330
mW
Total Package Power Dissipation Derating (Ta≥25°C)
∆PT/°C
-4.4
mW /°C
Isolation Voltage (AC,1min. , R.H.≤60%)
(Note 2)
BVS
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2) Device considered a two terminal device :Pins1,2 and 3 shorted together and pin4 and pin6 shorted
together.
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply Voltage
VAC
—
—
120
Vac
Forward Current
IF
*
15
20
25
mA
Peak On-State Current
ITP
—
—
1
A
Operating Temperature
Topr
−25
—
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
*In The case of TLP3022



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