TLP1243(C8)

2007-10-01

2

Characteristics

Symbol

Rating

Unit

Forward current

30

mA

Forward current derating

(Ta>25°C)

−0.28

mA/°C

Reverse voltage

5

V

Collector-emitter voltage

35

V

Emitter-collector voltage

5

V

Collector power dissipation

75

mW

Collector power dissipation

derating

(Ta>25℃)

−1

mW/°C

Collector current

50

mA

Operating temperature range

−30 to 95

°C

Storage temperature range

−40 to 100

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test conditions

Min

Typ.

Max

Unit

Forward voltage

1.00

1.18

1.40

V

Reverse current

⎯

⎯

10

μA

Peak emission wavelength

⎯

940

⎯

nm

Dark current

⎯

0.001

0.1

μA

Peak sensitivity wavelength

⎯

⎯

870

⎯

nm

Current transfer ratio

2.5

⎯

100

%

Collector-emitter saturation

voltage

⎯

0.1

0.35

V

Rise time

⎯

15

50

Fall time

⎯

15

50

μs