| 전자부품 데이터시트 검색엔진 |
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TLP200D 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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TLP200D 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page ![]() TLP200D 2007-10-01 3 Individual Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA LED Capacitance CT V = 0, f = 1 MHz ⎯ 30 ⎯ pF Off-state current IOFF VOFF = 200 V ⎯ ⎯ 1 μA Detector Capacitance COFF V = 0, f = 1 MHz ⎯ 100 ⎯ pF Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT ION = 200 mA ⎯ 1 3 mA On-state resistance RON ION = 200 mA, IF = 5 mA ⎯ 5 8 Ω Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Capacitance input to output CS VS = 0, f = 1 MHz ⎯ 0.8 ⎯ pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5 × 10 10 10 14 ⎯ Ω AC, 1 minute 1500 ⎯ ⎯ AC, 1 s, in oil ⎯ 3000 ⎯ Vrms Isolation voltage BVS DC, 1 minute, in oil ⎯ 3000 ⎯ Vdc Switching Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Turn-on time tON ⎯ 0.6 1.5 ms Turn-off time tOFF RL = 200 Ω (Note) VDD = 20 V, IF = 5 mA ⎯ 0.1 1.0 ms Note: Switching time test circuit 6, 8 RL VDD VOUT 5, 7 1, 3 2, 4 IF VOUT IF tON tOFF 90% 10% |
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