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2SA1201 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 2SA1201
상세설명  Voltage Amplifier Applications Power Amplifier Applications
PDF  4 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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2SA1201 데이터시트(HTML) 3 Page - Toshiba Semiconductor

  2SA1201 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1201 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1201 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1201 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SA1201
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
Base-emitter voltage VBE (V)
IC – VBE
Safe Operating Area
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
Ambient temperature Ta (°C)
PC – Ta
Common emitter
VCE = −5 V
−3
500
−30
−1000
−10
100
10
−100
−300
300
1000
Ta = 100°C
25
−25
50
30
0
−0.8
−0.4
−0.2
0
−0.4
−0.8
Common emitter
VCE = −5 V
−0.6
−0.6
−0.2
−1.0
−1.2
Ta = 100°C
25
−25
−3
−0.1
−30
−300
−10
−0.05
Common emitter
IC/IB = 10
−0.01
−100
−0.3
−0.5
Ta = 100°C
25
−25
−0.03
−1000
0
−16
−8
−4
0
−400
−800
−600
−12
−200
IB = −1 mA
−10
0
−7
−5
−4
−3
−2
Common emitter
Ta = 25°C
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
−0.3
−1
−10
−1
−100
−300
−3
−30
−10
−100
−5
−50
IC max (pulse)*
IC max (continuous)
100 ms*
1 ms*
10 ms*
VCEO max
−30
−3
−300
−3000
−1000
−500
DC
operation
Ta = 25°C
0
0
0.6
0.2
0.8
0.4
1.2
1.0
120
80
100
40
60
20
140
160
(1) Mounted on a ceramic
substrate (250 mm
2 × 0.8 t)
(2) No heat sink
(1)
(2)



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