HN2C01FU datasheet(1/3 Pages) TOSHIBA

부품명	HN2C01FU

상세설명	Audio Frequency General Purpose Amplifier Applications

PDF	3 Pages

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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1 / 3 page

HN2C01FU

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN2C01FU

Audio Frequency General Purpose Amplifier Applications

Small package (dual type)

High voltage and high current : VCEO = 50V, IC = 150mA (max)

High hFE

: hFE = 120~400

Excellent hFE linearity

: hFE (IC = 0.1mA) / (IC = 2mA)

= 0.95 (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

150

mA

Base current

IB

30

mA

Collector power dissipation

PC*

200

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

―

VCB = 60V, IE = 0

―

0.1

μA

Emitter cut-off current

IEBO

―

VEB = 5V, IC = 0

―

0.1

μA

DC current gain

hFE (Note)

―

VCE = 6V, IC = 2mA

120

―

400

―

Collector-emitter saturation voltage

VCE (sat)

―

IC = 100mA, IB =10mA

―

0.1

0.25

V

Transition frequency

fT

―

VCE = 10V, IC = 1mA

80

―

MHz

Collector output capacitance

Cob

―

VCB = 10V, IE = 0, f = 1MHz

―

2

3.5

pF

Note: hFE classification

Y(Y): 120~240, GR(G): 200~400

( ) marking symbol

Marking

Equivalent Circuit (Top View)

JEDEC

―

EIAJ

―

TOSHIBA

2-2J1B

Weight: 6.8mg

Unit: mm

유사한 부품 번호 - HN2C01FU

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	HN2C01FU	156Kb / 2P	NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

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