JDV2S05FS datasheet(1/3 Pages) TOSHIBA

부품명	JDV2S05FS

상세설명	Silicon Epitaxial Planar Type VCO for the UHF band

PDF	3 Pages

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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JDV2S05FS

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S05FS

VCO for the UHF band

• High capacitance ratio: C1V/C4V = 1.9 (typ.)

• Low series resistance: rs = 0.3 Ω (typ.)

• This device is suitable for use in a small-size tuner.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Reverse voltage

VR

10

V

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

VR

IR = 1 μA

10

⎯

V

Reverse current

IR

VR = 10 V

⎯

3

nA

C1V

VR = 1 V, f = 1 MHz

3.85

⎯

4.55

Capacitance

C4V

VR = 4 V, f = 1 MHz

1.94

⎯

2.48

pF

Capacitance ratio

C1V/C4V

⎯

1.7

1.9

⎯

Series resistance

rs

VR = 1 V, f = 470 MHz

⎯

0.3

0.5

Ω

Note: Signal level when capacitance is measured: Vsig = 100 mVrms

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1L1A

Weight: 0.0006 g (typ.)

K

0.2

0.1±0.05

0.6±0.05

A

0.48+0.02

-0.03

±0.05

A

M

0.07

fSC

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