SSM3K02F datasheet(2/5 Pages) TOSHIBA

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SSM3K02F

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

⎯

±5

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 1 mA, VGS = 0

⎯

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0

⎯

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.6

⎯

1.1

Forward transfer admittance

⎪Yfs⎪

VDS = 3 V, ID = 0.5 A

(Note)

1.5

⎯

ID = 0.5 A, VGS = 4 V

(Note)

⎯

140

200

Drain-source ON resistance

RDS (ON)

ID = 0.5 A, VGS = 2.5 V

(Note)

⎯

180

250

Input capacitance

Ciss

VDS = 10 V, VGS = 0, f = 1 MHz

⎯

115

⎯

Reverse transfer capacitance

Crss

VDS = 10 V, VGS = 0, f = 1 MHz

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0, f = 1 MHz

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = 15 V, ID = 0.5 A,

VGS = 0~2.5 V, RG = 4.7 Ω

⎯

Note: Pulse test

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this

product. For normal switching operation, VGS (ON) requires higher voltage than Vth and VGS (off) requires lower

voltage than Vth.

(Relationship can be established as follows: VGS (off) < Vth < VGS (ON))

Please take this into consideration for using the device.

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