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TLP331 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TLP331
상세설명  GaAs Ired & Photo−Transistor
PDF  8 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP331 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TLP331,TLP332
2007-10-01
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
―
―
10
μA
Capacitance
CT
V = 0, f = 1MHz
―
30
―
pF
Collector
−emitter
breakdown voltage
V(BR)CEO IC = 0.5mA
55
―
―
V
Emitter
−collector
breakdown voltage
V(BR)ECO IE = 0.1mA
7
―
―
V
Collector
−base breakdown voltage
(TLP331)
V(BR)CBO IC = 0.1mA
80
―
―
V
Emitter
−base breakdown voltage
(TLP331)
V(BR)EBO IE = 0.1mA
7
―
―
V
VCE = 24V
―
10
100
nA
Collector dark current
ICEO
VCE = 24V, Ta = 85°C
―
2
50
μA
Collector dark current
(TLP331)
ICER
VCE = 24V, Ta = 85°C
RBE = 1MΩ
―
0.5
10
μA
Collector dark current
(TLP331)
ICBO
VCB = 10V
―
0.1
―
nA
DC forward current gain
(TLP331)
hFE
VCE = 5V, IC = 0.5mA
―
1000
―
―
Capacitance (collector to emitter)
CCE
V = 0 , f = 1MHz
―
12
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
100
―
1200
Current transfer ratio
IC / IF
IF = 1mA, VCE = 0.5V
Rank BV
200
―
1200
%
50
―
―
Low input CTR
IC / IF(low)
IF = 0.5mA, VCE = 1.5V
Rank BV
100
―
―
%
Base photo
−current (TLP331)
IPB
IF = 1mA, VCB = 5V
―
10
―
μA
IC = 0.5mA IF = 1mA
―
—
0.4
―
0.2
―
Collector
−emitter
saturation voltage
VCE(sat)
IC = 1mA IF = 1mA
Rank BV
―
―
0.4
V
Coupled Electrical Characteristics (Ta = 25~75°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
50
―
―
Current transfer ratio
IC / IF
IF = 1mA, VCE = 0.5V
Rank BV
100
―
―
%
―
50
―
Low input CTR
IC / IF(low)
IF = 0.5mA, VCE = 1.5V
Rank BV
―
100
―
%



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