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STGWA30M65DF2 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 STGWA30M65DF2
상세설명  Trench Field-Stop Technology IGBT
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STGWA30M65DF2 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2180
eq STGWA30M65DF2
Trench Field-Stop Technology IGBT
www.iscsemi.com
1
DESCRIPTION
· Optimized for Low Conduction Losses
· Tight parameters distribution
· Safer Paralleling
· Low thermal resistance
· Soft and very fast recovery anti parallel diode
APPLICATIONS
· PFC Circuits
· Motor Drives
· Uninterruptible power supplies (UPS)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
60
A
IC
Collector Current-Continuous
@ TC=100℃
30
A
ICM
Pulsed Collector Current@ TC=25℃
120
A
PD
Power Dissipation @TC=25℃
258
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.58
℃
/W


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