HSB2836 datasheet(2/5 Pages) RENESAS

부품명	HSB2836

상세설명	Silicon Epitaxial Planar Diode for High Speed Switching

PDF	5 Pages

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제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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2 / 5 page

HSB2836

Rev.2.00 Mar 04, 2005 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Peak reverse voltage

VRM

Reverse voltage

Peak forward current

IFM *

300

Non-Repetitive peak forward surge current

IFSM *

Average rectified current

IO *

100

Junction temperature

125

°C

Storage temperature

Tstg

−55 to +125

°C

Notes: 1. Two device total.

2. Value at duration of 1

µs, two device total.

Electrical Characteristics *

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

VF1

—

1.0

IF = 10 mA

VF2

—

1.0

IF = 50 mA

Forward voltage

VF3

—

1.2

IF = 100 mA

Reverse current

—

0.1

µA

VR = 80 V

Capacitance

—

4.0

VR = 0 V, f = 1 MHz

Reverse recovery time

trr

—

20.0

IF = 10 mA, VR = 6 V, RL= 50 Ω

Note

: Per one device.

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