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TA8483CP 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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TA8483CP 데이터시트(HTML) 5 Page - Toshiba Semiconductor |
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5 / 22 page ![]() TA8483CP 2006-3-2 5 5. Output voltage detection circuit (COMP) • Brings about majority logical sum output. (When two −phase output or higher out of three−phase output is larger than mid −point voltage VCC / 2, "high" is output; when it is smaller, "low" is output.) 6. Upper side output B −E shunt circuit • A base−emitter shunt circuit is incorporated to turn off the upper side power transistor. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply voltage VS 35 V Output current IOUT (PEAK) 2.0 A Power dissipation PD 2.3 (Note) W Operating temperature Topr −30~85 °C Storage temperature Tstg −55~150 °C Input voltage VIN 6.0 V (Note) No heat sink Recommended Operating Conditions (Ta = −30 to 85°C) Characteristic Symbol Min Typ. Max Unit Supply voltage VS 20 ― 30 V Output current IOUT ― ― 1.5 A Chopping frequency fPWM ― 20 40 kHz 4 COMP < Output voltage detection circuit > Internal logic power supply (≃ 6.7V) 8 250µA VCC VI OUT 9 / 7 / 6 10 : Shunt circuit < Upper side output b − e shunt circuit > |
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