HS-3530ARH, HS-3530AEH

FN4653 Rev 4.00

Page 3 of 7

Jun 18, 2018

Die Characteristics

DIE DIMENSIONS:

1720µm x 1390µm x 483µm ±25.4µm

(68 mils x 55 mils x 19 mils ±1 mil)

INTERFACE MATERIALS

GLASSIVATION

Type: Silox (SiO2)

Thickness: 8.0kA ±1.0kA

TOP METALLIZATION

Type: AlSiCu

Thickness: 16.0kA ±2kA

SUBSTRATE:

Radiation Hardened Silicon Gate,

Dielectric Isolation

BACKSIDE FINISH:

Silicon

ASSEMBLY RELATED INFORMATION

SUBSTRATE POTENTIAL:

Unbiased (DI)

ADDITIONAL INFORMATION

WORST CASE CURRENT DENSITY:

<2.0 x 105 A/cm2

TRANSISTOR COUNT:

49

Metallization Mask Layout Pin Numbers shown are for the Can Package

HS-3530ARH, HS-3530AEH

OFFSET

(1)

ISET

(8)

NC

V+ (7)

NC

OUTPUT (6)

OFFSET (5)

NC

V- (4)

NC

IN+

(3)

IN-

(2)