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TC7SA04FU 데이터시트(PDF) 5 Page - Toshiba Semiconductor

부품명 TC7SA04FU
상세설명  Inverter
PDF  9 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SA04FU 데이터시트(HTML) 5 Page - Toshiba Semiconductor

  TC7SA04FU Datasheet HTML 1Page - Toshiba Semiconductor TC7SA04FU Datasheet HTML 2Page - Toshiba Semiconductor TC7SA04FU Datasheet HTML 3Page - Toshiba Semiconductor TC7SA04FU Datasheet HTML 4Page - Toshiba Semiconductor TC7SA04FU Datasheet HTML 5Page - Toshiba Semiconductor TC7SA04FU Datasheet HTML 6Page - Toshiba Semiconductor TC7SA04FU Datasheet HTML 7Page - Toshiba Semiconductor TC7SA04FU Datasheet HTML 8Page - Toshiba Semiconductor TC7SA04FU Datasheet HTML 9Page - Toshiba Semiconductor  
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TC7SA04F/FU
2007-11-01
5
Dynamic Switching Characteristics (Ta = 25°C, input: tr = tf = 2.0 ns, CL = 30 pF)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Unit
VIN = 1.8 V, VIL = 0 V
(Note 11)
1.8
0.25
VIN = 2.5 V, VIL = 0 V
(Note 11)
2.5
0.6
Quiet output maximum dynamic VOL
VOLP
VIN = 3.3 V, VIL = 0 V
(Note 11)
3.3
0.8
ns
VIN = 1.8 V, VIL = 0 V
(Note 11)
1.8
−0.25
VIN = 2.5 V, VIL = 0 V
(Note 11)
2.5
−0.6
Quiet output minimum dynamic VOL
VOLV
VIN = 3.3 V, VIL = 0 V
(Note 11)
3.3
−0.8
ns
VIN = 1.8 V, VIL = 0 V
(Note 11)
1.8
1.5
VIN = 2.5 V, VIL = 0 V
(Note 11)
2.5
1.9
Quiet output minimum dynamic VOH
VOHV
VIN = 3.3 V, VIL = 0 V
(Note 11)
3.3
2.2
ns
Note 11: Parameter guaranteed by design.
Capacitive Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Unit
Input capacitance
CIN
⎯
1.8, 2.5, 3.3
5
pF
Power dissipation capacitance
CPD
fIN = 10 MHz
(Note 12)
1.8, 2.5, 3.3
18
pF
Note 12: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation.
ICC (opr) = CPD・VCC・fIN + ICC



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