| 전자부품 데이터시트 검색엔진 |
|
IPZA65R018CM8 데이터시트(PDF) 1 Page - Infineon Technologies AG |
|
|
|||||||||||||||||||||||||||||
IPZA65R018CM8 데이터시트(HTML) 1 Page - Infineon Technologies AG |
|
1 / 15 page ![]() 1 2 3 4 tab Datasheet 1 Revision 2.1 https://www.infineon.com 2025‑03‑07 MOSFET 650V CoolMOS™ CM8 Power Transistor The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 650V CoolMOS™ CM8 series is the successor to the 650V CoolMOS™ 7 Family and is enhancing Infineon’s WBG offering. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode (CFD) for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient. Features Benefits Potential applications Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key performance parameters Parameter Value Unit V @ T 700 V R 18 mΩ Q 173 nC I 505 A E @ 400V 19.6 μJ Body diode di /dt 1300 A/μs ESD class (HBM) 2 PG‑TO247‑4 Part number Package Marking Related links IPZA65R018CM8 PG‑TO247‑4 65R018C8 see Appendix A Best in class 650V SJ MOSFET performance • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best in class thermal performance • Ease of use and fast design‑in through low ringing tendency and usage across PFC and PWM stages • Simplified thermal management due to our advanced die attach technique • Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due state of the art ESD protection • Suitable for a wide variety of applications and power ranges • Power supplies and converters • PFC stages & LLC resonant converters • High efficiency switching applications • e.g. Datacenter, AI Server, Telecom Power Supply • DS j,max DS(on),max g,typ D,pulse oss F Public IPZA65R018CM8 Final datasheet Drain Pin 1, Tab Gate Pin 4 Power Source Pin 2 Driver Source Pin 3 *1: Internal body diode *1 |
유사한 부품 번호 - IPZA65R018CM8 |
|
유사한 설명 - IPZA65R018CM8 |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |