© 2002 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSC5019 Rev. 1.4

September 2015

KSC5019

NPN Epitaxial Silicon Transistor

Features

• Low Saturation

•VCE(sat) = 0.5 V at IC = 2 A, IB = 50 mA

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Note:

1. PW ≤ 10 ms, duty cycle ≤ 30%

Part Number

Top Mark

Package

Packing Method

KSC5019MTA

C5019

TO-92 3L

Ammo

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCES

Collector-Emitter Voltage

30

V

VCEO

Collector-Emitter Voltage

10

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current (DC)

2

A

ICP

Collector Current (Pulse)(1)

5A

IB

Base Current

2

A

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-55 to 150

°C

1. Emitter

1 2 3

1

2

3

Straight Lead

Bent Lead

TO-92

Bulk Packing

Tape & Reel

Ammo Packing

2. Collector

3. Base