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BULD742C 데이터시트(PDF) 4 Page - STMicroelectronics |
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BULD742C 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Electrical characteristics BULD742C 4/12 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE =1050 V 0.2 10 µA ICEO Collector cut-off current (IB = 0) VCE =400 V 10 250 µA V(BR)EBO Emitter base breakdown voltage (IC = 0) IE = 1 mA 15 19 24 V VCEO(sus) (1) 1. Pulsed duration = 300 ms, duty cycle ≤1.5% Collector-emitter sustaining voltage (IB = 0) IC =10 mA 400 450 V VCE(sat) (1) Collector-emitter saturation voltage IC = 1 A _ IB = 0.2 A IC = 3.5 A _ _ IB = 1 A 0.15 0.6 0.5 1.5 V V VBE(sat) (1) Base-emitter saturation voltage IC = 3.5 A IB = 1 A 1.1 1.5 V hFE (1) DC current gain IC = 0.1 A _ VCE = 5 V IC = 0.8 A _ _ VCE = 3 V 48 25 75 35 100 50 ts tf Resistive load Storage time Fall time IC = 2 A VCC = 125 V IB1 = -IB2 = 400 mA tp = 300 µs VBE(off) = -5 V 2.4 350 3.5 500 µs ns Ear Repetitive avalanche energy L = 2 mH C = 1.8 nF VBE(off) = -5 V 6mJ |
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