August 2007

Rev 1

1/11

11

BUL742CFP

High voltage fast-switching

NPN power transistor

Features

Applications

Description

The device is manufactured using high voltage

Multi-Epitaxial Planar technology for high

switching speeds and high voltage capability.

Thanks to an increased intermediate layer, it has

an intrinsic ruggedness which enables the

transistor to withstand an high collector current

level during breakdown condition, without using

the transil protection usually necessary in typical

converters for lamp ballast.

Figure 1.

Internal schematic diagram

TO-220FP

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

BUL742CFP

BUL742CFP

TO-220FP

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