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TC75S59F 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 TC75S59F
상세설명  Single Comparator
PDF  9 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC75S59F 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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TC75S59F/FU/FE
2007-11-01
3
Electrical Characteristics (VDD = 5 V, VSS = GND, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input offset voltage
VIO
⎯
⎯
⎯
±1
±7
mV
Input offset current
IIO
⎯
⎯
⎯
1
⎯
pA
Input bias current
II
⎯
⎯
⎯
1
⎯
pA
Common mode input voltage
CMVIN
⎯
⎯
0
⎯
4.1
V
Supply current
IDD (Note)
⎯
⎯
⎯
110
220
μA
Voltage gain
GV
⎯
⎯
⎯
94
⎯
dB
Sink current
Isink
⎯
VOL = 0.5 V
13
25
⎯
mA
Output leak current
ILEAK
⎯
VO = 5 V
⎯
5
⎯
nA
Output voltage
VOL
⎯
Isink = 5.0 mA
⎯
0.1
0.3
V
Operating supply voltage
VDD
⎯
⎯
1.8
⎯
7.0
V
tPLH (1)
⎯
Over drive
= 100 mV
⎯
200
⎯
Propagation delay time (turn on)
tPLH (2)
⎯
TTL step input
⎯
140
⎯
ns
tPHL (1)
⎯
Over drive
= 100 mV
⎯
80
⎯
Propagation delay time (turn off)
tPHL (2)
⎯
TTL step input
⎯
60
⎯
ns
tTLH
⎯
Over drive
= 100 mV
⎯
160
⎯
Response time
tTHL
⎯
Over drive
= 100 mV
⎯
3
⎯
ns
Electrical Characteristics (VDD = 3 V, VSS = GND, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input offset voltage
VIO
⎯
⎯
⎯
±1
±7
mV
Input offset current
IIO
⎯
⎯
⎯
1
⎯
pA
Input bias current
II
⎯
⎯
⎯
1
⎯
pA
Common mode input voltage
CMVIN
⎯
⎯
0
⎯
2.1
V
Supply current
IDD (Note)
⎯
⎯
⎯
100
200
μA
Sink current
Isink
⎯
VOL = 0.5 V
6
18
⎯
mA
Output leak current
ILEAK
⎯
VO = 3 V
⎯
5
⎯
nA
Output voltage
VOL
⎯
Isink = 5.0 mA
⎯
0.15
0.35
V
Propagation delay time (turn on)
tPLH
⎯
Over drive
= 100 mV
⎯
160
⎯
ns
Propagation delay time (turn off)
tPHL
⎯
Over drive
= 100 mV
⎯
70
⎯
ns
tTLH
⎯
Over drive
= 100 mV
⎯
170
⎯
Response time
tTHL
⎯
Over drive
= 100 mV
⎯
3
⎯
ns
Note: This device’s current consumption increases as its operating frequency increases. Note that the power
dissipation should not exceed the allowable power dissipation.



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