| 전자부품 데이터시트 검색엔진 |
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2N2222A 데이터시트(PDF) 3 Page - STMicroelectronics |
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2N2222A 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() ELECTRICAL CHARACTERISTICS (continued) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit NF Noise Figure IC =0.1 mA VCE =10 V f= 1KHz Rg =1K Ω 4dB hie Input I mpedance IC =1 mA VCE =10 V IC =10 mA VCE =10 V 2 0.25 8 1.25 k Ω k Ω hre Reverse Voltage Ratio IC =1 mA VCE =10 V IC =10 mA VCE =10 V 8 4 10 -4 10 -4 hoe Out put Admittance IC =1 mA VCE =10 V IC =10 mA VCE =10 V 5 25 35 200 µS µS td ∗∗ Delay Time VCC =30 V IC = 150 mA IB1 =15 mA VBB =-0.5 V 10 ns tr ∗∗ Rise Time VCC =30 V IC = 150 mA IB1 =15 mA VBB =-0.5 V 25 ns ts ∗∗ Storage T ime VCC =30 V IC = 150 mA IB1 =-IB2 =15 mA 225 ns tf ∗∗ Fall T ime VCC =30 V IC = 150 mA IB1 =-IB2 =15 mA 60 ns rbb ’ Cb’c Feedback Time Constant IC =20 mA VCE =20 V f= 31.8MHz 150 ps ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1% ∗∗ See test circuit 2N2219A/2N2222A 3/8 |
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