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2N3725 데이터시트(PDF) 1 Page - STMicroelectronics |
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2N3725 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() 2N3725 January 1989 HIGH VOLTAGE, HIGH CURRENT SWITCH The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating cur- rents to 1 A. Fast switching times are assured be- cause of the high minimum fT (300 MHz) and tight control on storage time. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit VCBO Collector-base Voltage (IE =0) 80 V VCES Collector-emitter Voltage (V BE =0) 80 V VCEO Collector-emitter Voltage (IB =0) 50 V VEBO Emitter-base Voltage (I C =0) 6 V I C Collector Current 1 A Pto t Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C 0.8 3.5 W W Tstg,Tj Storage and Junction Temperature – 65 to 200 °C DESCRIPTION TO-39 INTERNAL SCHEMATIC DIAGRAM 1/6 |
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