2

®

INA115

SPECIFICATIONS

ELECTRICAL

At T

A = +25°C, VS = ±15V, RL = 2kΩ unless otherwise noted.

T Specification same as INA115BU.

NOTE: (1) Temperature coefficient of the “50k

Ω” term in the gain equation. (2) Output specifications are for output amplifier, A

3. A1 and A2 provide the same output

voltage swing but have less output current drive. A1 and A2 can drive external loads of 25kΩ || 200pF.

INA115BU

INA115AU

PARAMETER

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

Offset Voltage, RTI

Initial

TA = +25°C

±10 + 20/G

±50 + 100/G

±25 + 30/G ±125 + 500/G

µV

vs Temperature

TA = TMIN to TMAX

±0.1 + 0.5/G ±0.25 + 5/G

±0.25 + 5/G

±1 + 10/G

µV/°C

vs Power Supply

VS = ±2.25V to ±18V

0.5 + 2/G

3 + 10/G

TT

µV/V

Long-Term Stability

±0.2 + 0.5/G

T

µV/mo

Impedance, Differential

1010 || 6

T

Ω || pF

Common-Mode

1010 || 6

T

Ω || pF

Input Common-Mode Range

±11

±13.5

TT

V

Safe Input Voltage

±40

T

V

Common-Mode Rejection

VCM = ±10V, ∆RS = 1kΩ

G = 1

80

96

75

90

dB

G = 10

96

115

90

106

dB

G = 100

110

120

106

110

dB

G = 1000

115

120

106

110

dB

BIAS CURRENT

±0.5

±2

T

±5nA

vs Temperature

±8

T

pA/

°C

OFFSET CURRENT

±0.5

±2

T

±5nA

vs Temperature

±8

T

pA/

°C

NOISE VOLTAGE, RTI

G = 1000, RS = 0Ω

f = 10Hz

15

T

nV/

√Hz

f = 100Hz

11

T

nV/

√Hz

f = 1kHz

11

T

nV/

√Hz

fB = 0.1Hz to 10Hz

0.4

T

µVp-p

Noise Current

f=10Hz

0.4

T

pA/

√Hz

f=1kHz

0.2

T

pA/

√Hz

fB = 0.1Hz to 10Hz

18

T

pAp-p

GAIN

Gain Equation

1 + (50k

Ω/R

G)

T

V/V

Range of Gain

1

10000

TT

V/V

Gain Error

G = 1

±0.01

±0.05

TT

%

G = 10

±0.02

±0.4

T

±0.5

%

G = 100

±0.05

±0.5

T

±0.7

%

G = 1000

±0.5

±1

T

±2%

Gain vs Temperature

G = 1

±2

±10

T

±10

ppm/

°C

50k

Ω Resistance(1)

±25

±100

TT

ppm/

°C

Nonlinearity

G = 1

±0.0001

±0.001

T

±0.002

% of FSR

G = 10

±0.0005

±0.002

T

±0.004

% of FSR

G = 100

±0.0005

±0.002

T

±0.004

% of FSR

G = 1000

±0.002

±0.01

T

±0.02

% of FSR

OUTPUT(2)

Voltage

IO = 5mA, TMIN to TMAX

±13.5

±13.7

TT

V

VS = ±11.4V, RL = 2kΩ±10

±10.5

TT

V

VS = ±2.25V, RL = 2kΩ±1

±1.5

TT

V

Load Capacitance Stability

1000

T

pF

Short Circuit Current

+20/–15

T

mA

FREQUENCY RESPONSE

Bandwidth, –3dB

G = 1

1

T

MHz

G = 10

100

T

kHz

G = 100

10

T

kHz

G = 1000

1

T

kHz

Slew Rate

VO = ±10V, G = 10

0.3

0.6

TT

V/

µs

Settling Time,

0.01%

G = 1

18

T

µs

G = 10

20

T

µs

G = 100

120

T

µs

G = 1000

1100

T

µs

Overload Recovery

50% Overdrive

20

T

µs

POWER SUPPLY

Voltage Range

±2.25

±15

±18

TT

T

V

Current

VIN = 0V

±2.2

±3

TT

mA

TEMPERATURE RANGE

Specification

–40

+85

TT

°C

Operating

–40

+125

TT

°C

θ

JA

80

T

°C/W