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TCR3DM285A 데이터시트(PDF) 14 Page - Toshiba Semiconductor |
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TCR3DM285A 데이터시트(HTML) 14 Page - Toshiba Semiconductor |
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14 / 20 page ![]() TCR3DMxxA series 2024-10-28 Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 14 12.6. Ripple rejection Ratio vs. Frequency (CIN = none, COUT = 1.0 μF, VIN = VOUT + 1.0 V, VIN Ripple = 500 mVp-p, IOUT = 10 mA, Ta = 25°C) 0 10 20 30 40 50 60 70 80 90 100 1k 10k 100k 1M 10M Frequency (Hz) V OUT = 2.5 V 0 10 20 30 40 50 60 70 80 90 100 1k 10k 100k 1M 10M Frequency (Hz) V OUT = 1.0 V 0 10 20 30 40 50 60 70 80 90 100 1k 10k 100k 1M 10M Frequency (Hz) V OUT = 4.5 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. |
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