2N6388 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.92

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = rated VCEO

Tc = 125

0.3

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 80 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

VCER(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

RBE = 100

Ω

VCEV(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

VBE = -1.5V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 10 mA

IC = 10 A

IB = 100 mA

VBE

∗

Base-Emitter Voltage

IC = 5 A

VCE = 3 V

IC = 10 A

VCE = 3 V

2.8

4.5

hFE

∗

DC Current Gain

IC = 5 A

VCE = 3 V

IC = 10 A

VCE = 3 V

1000

100

20000

hfe

Small Signal Current

Gain

IC = 1 A

VCE = 10 V

f = 1MHz

IC = 1 A

VCE = 10 V

f = 1KHz

1000

∗

Parallel-diode Forward

Voltage

IF = 10 A

CCBO

Collector Base

Capacitance

IE = 0

VCB = 10 V

f = 1MHz

200

Is/b

∗∗

Second Breakdown

Collector Current

VCE = 25 V

2.6

Es/b

Second Breakdown

Energy

L = 12 mH

RBE = 100

Ω

VBE = -1.5 V

IC = 4.5 A

120

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

∗∗ Pulsed: Pulse duration = 100ms non repetitive pulse.

2N6388

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