MMF80R650P Datasheet

Jul. 2021. Revision 1.2

Magnachip Semiconductor Ltd.

2

Parameter

Symbol

Rating

Unit

Note

Drain – Source voltage

VDSS

800

V

Gate – Source voltage

VGSS

±

30

V

Continuous drain current(2)

ID

8

A

TC=25oC

5.05

A

TC=100oC

Pulsed drain current(3)

IDM

24

A

Power dissipation

PD

32

W

Single - pulse avalanche energy

EAS

340

mJ

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

Diode dv/dt ruggedness(5)

dv/dt

15

V/ns

Storage temperature

Tstg

-

55 ~150

oC

Maximum operating junction

temperature

Tj

150

oC

1)

ID limited by maximum junction temperature.

2)

Pulse width tP limited by Tj,max

3)

DC input voltage from all three leads to external heat sink

4)

ISD ≤ ID, VDS peak ≤ V(BR)DSS

Parameter

Symbol

Value

Unit

Thermal resistance, junction-case max

Rthjc

3.9

oC/W

Thermal resistance, junction-ambient max

Rthja

62.5

oC/W



Thermal Characteristics



Absolute Maximum Rating (Tc=25 oC unless otherwise specified)