TS13007BCZ datasheet(2/5 Pages) TSC

2 / 5 page

TS13007B

High Voltage NPN Transistor

2/5

Version: A07

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC =1mA, IB =0

BVCBO

700

Collector-Emitter Breakdown Voltage

IC =10mA, IE =0

BVCEO

400

Emitter-Base Breakdown Voltage

IE =1mA, IC =0

BVEBO

Collector Cutoff Current

VCE =400V, IB=0

ICEO

Collector Cutoff Current

VCB =700V, IE =0

ICBO

Emitter Cutoff Current

VEB = 9V, IC =0

IEBO

Collector-Emitter Saturation Voltage

IC=2A, IB =0.4A

IC=5A, IB =1A

IC=8A, IB =2A

VCE(SAT)1

VCE(SAT)2

VCE(SAT)3

1.5

Base-Emitter Saturation Voltage

IC=2A, IB =0.4A

IC=5A, IB =1A

VBE(SAT)1

VBE(SAT)2

1.2

1.6

DC Current Gain

VCE =5V, IC = 2A

VCE =5V, IC = 5A

hFE

Dynamic

Frequency

VCE =10V, IC =0.5A

MHz

Output Capacitance

VCB =10V, f =0.1MHz

Cob

180

Resistive Load Switching Time (Ratings)

Delay Time

0.06

0.1

Rise Time

0.45

Storage Time

tSTG

2.8

Fall Time

VCC =125V, IC =5A,

IB1 =IB2=1A, tP =25uS

Duty Cycle ≤1%

0.3

0.7

Note: pulse test: pulse width ≤300uS, duty cycle ≤2%

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