GATE

Source

DRAIN

M0161-01

GATE

Source

DRAIN

M0161-02

3

CSD87313DMS

www.ti.com

SLPS642 – APRIL 2017

Product Folder Links: CSD87313DMS

Submit Documentation Feedback

Copyright © 2017, Texas Instruments Incorporated

(1)

Dynamic characteristic measurements are for a single FET.

(2)

Typical RθJA = 125°C/W on a minimum 2-oz Cu pad.

5

Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

IS1S2

Source1-to-Source2 leakage current

VG1S1 = 0 V, VG2S2 = 0 V, VS1S2 = 24 V

1

μA

IGSS

Gate-to-source leakage current

VS1S2 = 0 V, VGS = 10 V

100

nA

VGS(th)

Gate-to-source threshold voltage

VS1S2 = VGS, IS1S2 = 250 μA

0.6

0.9

1.2

V

RS1S2(on)

Source1-to-Source2 on resistance

VGS = 2.5 V, IS1S2 = 20 A

6.7

9.6

m

Ω

VGS = 4.5 V, IS1S2 = 23 A

4.6

5.5

gfs

Transconductance

VS1S2 = 3 V, IS1S2 = 23 A

149

S

DYNAMIC CHARACTERISTICS(1)

CISS

Input capacitance

VGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz

3300

4290

pF

COSS

Output capacitance

281

365

pF

CRSS

Reverse transfer capacitance

154

200

pF

Qg

Gate charge total (4.5 V)

VS1S2 = 15 V, IS1S2 = 23 A

VG1S1 = 4.5 V, VG2S2 = 0 V

28

nC

Qgd

Gate charge gate-to-drain

6.0

nC

Qgs

Gate charge gate-to-source

6.3

nC

Qg(th)

Gate charge at Vth

3.2

nC

td(on)

Turnon delay time

VS1S2 = 15 V, IS1S2 = 23 A

VGS = 4.5 V, RGEN = 0 Ω

9

ns

tr

Rise time

27

ns

td(off)

Turnoff delay time

41

ns

tf

Fall time

13

ns

DIODE CHARACTERISTICS

Ifss

Maximum continuous Source1-to-Source2

diode forward current(2)

VG1S1 = 0 V, VG2S2 = 4.5 V

2

A

Vfss

Source1-to-Source2 diode forward voltage VG1S1 = 0 V, VG2S2 = 4.5 V, Ifss = 23 A

0.8

1.0

V

(1)

Device mounted on minimum 2-oz (0.071-mm) thick Cu.

(2)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

UNIT

RθJA

Junction-to-case thermal resistance(1)

125

°C/W

RθJA

Junction-to-ambient thermal resistance(1)(2)

45

°C/W

RθJA = 45°C/W when

mounted on 1 in2 (6.45

cm2) of

2-oz (0.071-mm) thick

Cu.

RθJA = 125°C/W when

mounted on a

minimum pad area of

2-oz (0.071-mm) thick

Cu.