MMBT3906 datasheet(1/3 Pages) TSC

부품명	MMBT3906

상세설명	30.3 Watts PNP Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

제조업체	TSC [Taiwan Semiconductor Company, Ltd]

홈페이지	http://www.taiwansemi.com

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Pb

RoHS

COMPLIANCE

RoHS

COMPLIANCE

MMBT3906

0.3 Watts PNP Plastic-Encapsulate Transistors

SOT-23

Features

As complementary type, the NPN transistor

MMBT3904 is recommended

Epitaxial planar die construction

Marking: 2A

Dimensions in inches and (millimeters)

Maximum Ratings

TA=25

oC unless otherwise specified

Type Number

Symbol

Value

Units

Collector-base voltage

VCBO

-40

V

Collector-emitter voltage

VCEO

-40

V

Emitter-base voltage

VEBO

-5

V

Collector current - continuous

IC

-0.2

A

Collector Power dissipation

PC

0.3

W

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

MIN

MAX

Units

Collector-base breakdown voltage

IC=-10uA, Ie=0

V(BR)CBO

-40

V

Collector-emitter breakdown voltage

IC=-1mA, IB=0

V(BR)CEO

-40

V

Emitter-base breakdown voltage

IE=-10uA, IC=0

VBE(ON)

-5

V

Collector cut-off current

VCB=-40V IE=0

ICBO

-0.1

uA

Collector cur-off current

VCE=-30V VBE(off)=-3V

ICEX

-50

nA

Emitter cut-off current

VEB=--5V IC=0

IEBO

-0.1

DC current gain

VCE=-1V IC=-10mA

hFE(1)

100

300

VCE=-1V IC=-50mA

hFE(2)

60

VCE=-1V IC=-100mA

hFE(3)

30

Collector-emitter saturation voltage

IC=-50mA, IB=-5mA

VCE(sat)

-0.4

V

Base-emitter saturation voltage

IC=-50mA, IB=-5mA

VBE(sat)

-0.95

V

Transition frequency

VCE=-20V IC=-10mA f=100MHz

fT

250

MHz

Delay time

VCC=-3V, VBE=-0.5V IC=-10mA

td

35

nS

Rise time

IB1 =-1.0mA

tr

35

nS

Storage time

VCC=-3V, IC=-10mA

ts

225

nS

Fall time

IB1= IB2=-1.0mA

tf

75

nS

Operating and Storage Temperature Range

TJ, TSTG

-55 to + 150

oC

CLASSIFICATION OF

hFE1

Rank

O

Y

Range

100-200

200-300

Version: A07

유사한 부품 번호 - MMBT3906

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	MMBT3906	48Kb / 8P	PNP switching transistor 2000 Apr 11
STMicroelectronics	MMBT3906	58Kb / 4P	SMALL SIGNAL PNP TRANSISTOR Jun-2002
Transys Electronics	MMBT3906	202Kb / 2P	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Zowie Technology Corpor...	MMBT3906	107Kb / 5P	GENERAL PURPOSE TRANSISTOR NPN SILICON
Fairchild Semiconductor	MMBT3906	49Kb / 6P	PNP General Purpose Amplifier

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유사한 설명 - MMBT3906

제조업체	부품명	데이터시트	상세설명
Taiwan Semiconductor Co...	BC856A	88Kb / 3P	0.2 Watts PNP Plastic-Encapsulate Transistors
Taiwan Semiconductor Co...	BC807-16	83Kb / 2P	0.3 Watts PNP Plastic-Encapsulate Transistors
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TECH PUBLIC Electronics...	MMDT2907A	1Mb / 4P	PNPPNP Plastic-Encapsulate Transistors
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MMBT3906 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

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