LP3983

www.ti.com

SNVS213A – MAY 2004 – REVISED MARCH 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2) (3)

VIN

−0.3 to 6.5V

VEN

−0.3 to (VIN + 0.3V) to 6.5V(max)

VOUT

−0.3V to(V IN + 0.3V) to 6.5V(max)

Junction Temperature

150°C

Storage Temperature

−65°C to +150°C

Pad Temperature

265°C

(Soldering, 10 sec.)

ESD (4)

Human Body Model

2KV

Machine Model

100V

(1)

Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which

operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits

and associated test conditions, see the Electrical Characteristics tables.

(2)

All voltages are with respect to the potential at the GND pin.

(3)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(4)

The human body model is 100pF discharged through a 1.5k

Ω resistor into each pin. The machine model is a 200pF capacitor

discharged directly into each pin.

Operating Ratings

(1) (2)

VIN

(3)

VIN(MIN)to 6V

VEN,

0 to 6.0V

Recommended Load Current

0 to 5mA

Junction Temperature

−40°C to +125°C

Ambient Temperature (4)

−40°C to +119°C

(1)

Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which

operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits

and associated test conditions, see the Electrical Characteristics tables.

(2)

All voltages are with respect to the potential at the GND pin.

(3)

The minimum VIN is dependant on the device output option.For VOUT(NOM) ≤ 2.7V, VIN(MIN) will equal 2.5V. For VOUT(NOM) > 2.7V, VIN(MIN)

will equal VOUT(NOM) + 200mV.

(4)

The maximum ambient temperature (TA(max)) is dependant on the maximum operating junction temperature (TJ(max-op) = 125°C), the

maximum power dissipation of the device in the application (PD(max)), and the junction to ambient thermal resistance of the part/package

in the application (

θJA), as given by the following equation: TA(max) = TJ(max-op) - (θJA × PD(max)).

Thermal Properties

(1)

Junction to Ambient Thermal Resistance (

θJA)

(2)

255°C/W

(1)

The maximum ambient temperature (TA(max)) is dependant on the maximum operating junction temperature (TJ(max-op) = 125°C), the

maximum power dissipation of the device in the application (PD(max)), and the junction to ambient thermal resistance of the part/package

in the application (

θJA), as given by the following equation: TA(max) = TJ(max-op) - (θJA × PD(max)).

(2)

Junction to ambient thermal resistance is dependant on the application and board layout. In applications where high maximum power

dissipation is possible, special care must be paid to thermal dissipation issues in board design.

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