전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

NCP1607BDR2G. 데이터시트(PDF) 5 Page - ON Semiconductor

부품명 NCP1607BDR2G.
상세설명  Cost Effective Power Factor Controller
PDF  23 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1607BDR2G. 데이터시트(HTML) 5 Page - ON Semiconductor

  NCP1607BDR2G. Datasheet HTML 1Page - ON Semiconductor NCP1607BDR2G. Datasheet HTML 2Page - ON Semiconductor NCP1607BDR2G. Datasheet HTML 3Page - ON Semiconductor NCP1607BDR2G. Datasheet HTML 4Page - ON Semiconductor NCP1607BDR2G. Datasheet HTML 5Page - ON Semiconductor NCP1607BDR2G. Datasheet HTML 6Page - ON Semiconductor NCP1607BDR2G. Datasheet HTML 7Page - ON Semiconductor NCP1607BDR2G. Datasheet HTML 8Page - ON Semiconductor NCP1607BDR2G. Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 23 page
background image
NCP1607
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS
(For typical values, TJ = 25°C. For min/max values, TJ = −40°C to +125°C, unless otherwise specified,
VCC = 12 V, VFB = 2.4 V, VCS = 0 V, VCONTROL = open, VZCD = open, CDRV = 1 nF, CT = 1 nF)
Characteristics
Unit
Max
Typ
Min
Symbol
Current Capability of the Negative Active Clamp:
in normal mode (VZCD = 300 mV)
in shutdown mode (VZCD = 100 mV)
ICL(NEG)
2.5
35
3.7
70
5.0
100
mA
mA
Shutdown Threshold (VZCD falling)
VSDL
150
205
250
mV
Enable Threshold (VZCD rising)
VSDH
−
290
350
mV
Shutdown Comparator Hysteresis
VSD(HYS)
−
85
−
mV
Zero Current Detection Propagation Delay
tZCD
−
100
170
ns
Minimum Detectable ZCD Pulse Width
tSYNC
−
70
−
ns
Drive off Restart Timer
tSTART
75
179
300
ms
RAMP CONTROL
Ct Charge Current (VCT = 0 V)
−25
°C < TJ < +125°C
−40
°C < TJ < +125°C
ICHARGE
243
235
270
270
297
297
mA
Time to discharge a 1 nF Ct capacitor from VCT = 3.4 V to 100 mV.
tCT(discharge)
−
−
100
ns
Maximum Ct level before DRV switches off
−25
°C < TJ < +125°C
−40
°C < TJ < +125°C
VCTMAX
2.9
2.9
3.2
3.2
3.3
3.4
V
PWM Propagation Delay
tPWM
−
142
220
ns
OVER AND UNDERVOLTAGE PROTECTION
Dynamic Overvoltage Protection (OVP) Triggering Current:
TJ = 25°C
TJ = −40°C to +125°C
IOVP
9.0
8.7
10.5
−
11.8
12.1
mA
Hysteresis of the dynamic OVP current before the OVP latch is released
IOVP(HYS)
−
8.5
−
mA
Static OVP Threshold Voltage
VOVP
−
VEAL +
100 mV
−
V
Undervoltage Protection (UVP) Threshold Voltage
VUVP
0.25
0.302
0.4
V
GATE DRIVE SECTION
Gate Drive Resistance:
ROH @ ISOURCE = 100 mA
ROL @ ISINK = 100 mA
ROH
ROL
−
−
12
6.0
18
10
W
Drive voltage rise time from 10% VCC to 90% VCC
trise
−
30
80
ns
Drive voltage fall time from 90% VCC to 10% VCC
tfall
−
25
70
ns
Driver output voltage at VCC = VCC(on) − 200 mV and Isink = 10 mA
VOUT(start)
−
−
0.2
V
3. Parameter values are valid for transient conditions only.
4. Parameter characterized and guaranteed by design, but not tested in production.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com