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STSJ80N4LLF3 데이터시트(PDF) 1 Page - STMicroelectronics |
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STSJ80N4LLF3 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() November 2006 Rev 3 1/12 12 STSJ80N4LLF3 N-channel 40V - 0.0042 Ω - 18A - PowerSO-8™ STripFET™III Power MOSFET for DC-DC conversion General features ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Switching losses reduced ■ Low threshold device ■ Improved junction-case thermal resistance Description This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID STSJ80N4LLF3 40V 0.005 Ω 18A(1) 1. This value is rated according to Rthj-pcb PowerSO-8 DRAIN CONTACT ALSO ON THE BACKSIDE www.st.com Order codes Part number Marking Package Packaging STSJ80N4LLF3 80N4LL- PowerSO-8 Tape & reel |
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