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SN74HCS596-Q1

SCLS805 – JUNE 2020

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(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

(3)

Guaranteed by design.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VCC

Supply voltage

–0.5

7

V

IIK

Input clamp current(2)

VI < –0.5 V or VI > VCC + 0.5 V

±20

mA

IOK

Output clamp current(2)

VI < –0.5 V or VI > VCC + 0.5 V

±20

mA

IO

Continuous output current

VO = 0 to VCC

±35

mA

Continuous current through VCC or GND

±70

mA

TJ

Junction temperature(3)

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

AEC Q100-002 indicate that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per AEC Q100-002(1)

HBM ESD Classification Level 2

±4000

V

Charged device model (CDM), per AEC Q100-

011 CDM ESD Classification Level C6

±1500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply voltage

2

5

6

V

VI

Input voltage

0

VCC

V

VO

Output voltage

0

VCC

V

TA

Ambient temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

SN74HCS596-Q1

UNIT

PW (TSSOP)

D (SOIC)

16 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

141.2

122.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

78.8

80.9

°C/W

RθJB

Junction-to-board thermal resistance

85.8

80.6

°C/W

ΨJT

Junction-to-top characterization parameter

27.7

40.4

°C/W

ΨJB

Junction-to-board characterization parameter

85.5

80.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W