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STM32F205RFT6 데이터시트(PDF) 93 Page - STMicroelectronics

부품명 STM32F205RFT6
상세설명  ARM®-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F205RFT6 데이터시트(HTML) 93 Page - STMicroelectronics

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STM32F20xxx
Electrical characteristics
183
Note:
For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 33. Typical application with a 32.768 kHz crystal
6.3.9
Internal clock source characteristics
The parameters given in Table 32 and Table 33 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Table 31. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)
1. Guaranteed by design, not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
-
-
18.4
-
M
Ω
IDD
LSE current consumption
-
-
-
1
µA
gm
Oscillator Transconductance
-
2.8
-
-
µA/V
tSU(LSE)(2)
2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer
startup time
VDD is stabilized
-
2
-
s
Table 32. HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
16
-
MHz
ACCHSI
HSI user-trimming step(2)
2. Guaranteed by design, not tested in production.
--
-
1
%
Accuracy of the
HSI oscillator
TA = –40 to 105 °C(3)
3. Guaranteed by characterization results.
– 8
-
4.5
%
TA = –10 to 85 °C(3)
– 4
-
4
%
TA = 25 °C(4)
4. Factory calibrated, parts not soldered.
– 1
-
1
%
tsu(HSI)(2) HSI oscillator startup time
-
-
2.2
4.0
µs
IDD(HSI)(2) HSI oscillator power consumption
-
-
60
80
µA



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