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STM32F205RFT6 데이터시트(PDF) 137 Page - STMicroelectronics |
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STM32F205RFT6 데이터시트(HTML) 137 Page - STMicroelectronics |
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137 / 184 page ![]() DocID15818 Rev 15 137/184 STM32F20xxx Electrical characteristics 183 Synchronous waveforms and timings Figure 61 through Figure 64 represent synchronous waveforms, and Table 77 through Table 79 provide the corresponding timings. The results shown in these tables are obtained with the following FSMC configuration: • BurstAccessMode = FSMC_BurstAccessMode_Enable; • MemoryType = FSMC_MemoryType_CRAM; • WriteBurst = FSMC_WriteBurst_Enable; • CLKDivision = 1; (0 is not supported, see the STM32F20xxx/21xxx reference manual) • DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM In all timing tables, the THCLK is the HCLK clock period. th(A_NWE) Address hold time after FSMC_NWE high THCLK– 0.5 - ns th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK- 1 - ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5 ns tv(Data_NADV) FSMC_NADV high to Data valid - THCLK+2 ns th(Data_NWE) Data hold time after FSMC_NWE high THCLK– 0.5 - ns 1. CL = 30 pF. 2. Guaranteed by characterization results, not tested in production. Table 75. Asynchronous multiplexed PSRAM/NOR write timings(1)(2) (continued) Symbol Parameter Min Max Unit |
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