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STM32F429NET6 데이터시트(PDF) 97 Page - STMicroelectronics

부품명 STM32F429NET6
상세설명  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT
PDF  231 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32F429NET6 데이터시트(HTML) 97 Page - STMicroelectronics

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STM32F427xx STM32F429xx
Electrical characteristics
192
6.3.5
reset and power control block characteristics
The parameters given in Table 22 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 17.
Table 22. reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising edge)
2.09
2.14
2.19
V
PLS[2:0]=000 (falling edge)
1.98
2.04
2.08
V
PLS[2:0]=001 (rising edge)
2.23
2.30
2.37
V
PLS[2:0]=001 (falling edge)
2.13
2.19
2.25
V
PLS[2:0]=010 (rising edge)
2.39
2.45
2.51
V
PLS[2:0]=010 (falling edge)
2.29
2.35
2.39
V
PLS[2:0]=011 (rising edge)
2.54
2.60
2.65
V
PLS[2:0]=011 (falling edge)
2.44
2.51
2.56
V
PLS[2:0]=100 (rising edge)
2.70
2.76
2.82
V
PLS[2:0]=100 (falling edge)
2.59
2.66
2.71
V
PLS[2:0]=101 (rising edge)
2.86
2.93
2.99
V
PLS[2:0]=101 (falling edge)
2.65
2.84
2.92
V
PLS[2:0]=110 (rising edge)
2.96
3.03
3.10
V
PLS[2:0]=110 (falling edge)
2.85
2.93
2.99
V
PLS[2:0]=111 (rising edge)
3.07
3.14
3.21
V
PLS[2:0]=111 (falling edge)
2.95
3.03
3.09
V
VPVDhyst(1) PVD hysteresis
-
100
-
mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge
1.60
1.68
1.76
V
Rising edge
1.64
1.72
1.80
V
VPDRhyst(1) PDR hysteresis
-
40
-
mV
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
V
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
V
Rising edge
2.53
2.59
2.63
V
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
V
Rising edge
2.85
2.92
2.97
V
VBORhyst(1) BOR hysteresis
-
100
-
mV
TRSTTEMPO
(1)(2)
POR reset temporization
0.5
1.5
3.0
ms



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