ACS1SLASH085S datasheet(5/8 Pages) STMICROELECTRONICS

5 / 8 page

ACS108-5Sx

5/8

Fig. 5: Maximum power dissipation versus RMS

on-state current.

Fig. 6: RMS on-state current versus ambient

temperature.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

IT(RMS)(A)

P(W)

90 100 110 120 130

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Tamb(°C)

IT(RMS)(A)

ACS108-5SA (TO92, Tamb=Tlead)

ACS108-5SN with 5cm² copper surface under tab

ACS108-5SA (TO92)

Fig. 7-1: Relative variation of thermal impedance

junction

ambient

versus

pulse

duration

(ACS108-5SA) (TO-92).

Fig. 7-2: Relative variation of thermal impedance

junction

ambient

versus

pulse

duration

(ACS108-5SN) (SOT-223).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

tp(s)

Zth(j-a) / Rth(j-a)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

tp(s)

Zth(j-a) / Rth(j-a)

Fig. 8: Relative variation of gate trigger current

versus junction temperature.

Fig. 9: Relative variation of holding and latch-

ing current versus junction temperature.

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Tj(°C)

IGT [Tj] / IGT [Tj=25°C]

-40

-20

100

120

140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Tj(°C)

IH,IL [Tj] / IH,IL [Tj=25°C]

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