AM0912-080 datasheet(1/3 Pages) STMICROELECTRONICS

부품명	AM0912-080

상세설명	AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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September 1992

AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .400 2NLFL (S042)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 90 W MIN. WITH 13 dB GAIN

.

BANDWIDTH 225 MHz

DESCRIPTION

The AM0912-080 Avionics power transistor is a

broadband, high peak pulse power device speci-

fically designed for avionics applications requiring

broad bandwidth with moderate duty cycle and

pulse width constraints such as ground/ship based

DME/TACAN.

This device is also designed for specialized ap-

plications including JTIDS where reduced power

provided under pulse formats utilizing short pulse

widths and high burst or overall duty cycles.

The AM0 912-08 0 is ho used in the unique

AMPAC™ Hermetic Metal/Ceramic package with

internal Input/Output matching structures.

PIN CONNECTION

BRANDING

0912-80

ORDER CODE

AM0912-080

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation*

(TC

≤100˚C)

220

W

IC

Device Current*

7.0

A

VCC

Collector-Supply Voltage*

50

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.80

°C/W

*Applies only to rated RF amplifier operation

AM0912-080

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/3

유사한 부품 번호 - AM0912-080

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Advanced Semiconductor	AM0912-080	101Kb / 2P	RF POWER TRANSISTOR REV. B

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AM0912-080 데이터시트(PDF) 1 Page - STMicroelectronics

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