AM1011-075 datasheet(1/4 Pages) STMICROELECTRONICS

부품명	AM1011-075

상세설명	L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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September 1992

L-BAND AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .400 2LFL (S036)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

10:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 75 W MIN. WITH 9.2 dB GAIN

DESCRIPTION

The AM1011-075 device is a high power Class

C transistor specifically designed for L-Band

Avionics transponder/interrogator pulsed output

and driver applications.

This device is capable of operation over a wide

range of pulse widths, duty cycles, and tempera-

tures and is capable of withstanding 10:1 output

VSWR at rated RF conditions. Low RF thermal

resistance and computerized automatic wire bond-

ing techniques ensure high reliability and product

consistency.

The AM1011-075 is supplied in the AMPAC

™ Her-

metic M etal/Ceramic package with i nternal

Input/Output matching structures.

PIN CONNECTION

BRANDING

1011-75

ORDER CODE

AM1011-075

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation*

(TC

≤ 100°C)

175

W

IC

Device Current*

5.4

A

VCC

Collector-Supply Voltage*

55

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.86

°C/W

*Applies only to rated RF amplifier operation

AM1011-075

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/4

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