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TS5MP645YFPR 데이터시트(PDF) 6 Page - Texas Instruments

부품명 TS5MP645YFPR
상세설명  TS5MP645 4-Data Lane 2:1 MIPI Switch (10-Channel, 2:1 Analog Switch)
PDF  33 Pages
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제조업체  TI2 [Texas Instruments]
홈페이지  https://www.ti.com
Logo TI2 - Texas Instruments

TS5MP645YFPR 데이터시트(HTML) 6 Page - Texas Instruments

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TS5MP645
SCDS385B – JANUARY 2018 – REVISED JULY 2018
www.ti.com
Product Folder Links: TS5MP645
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
6.5 Electrical Characteristics
Over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY
IDD
Active Supply Current
VDD = 1.65 V to 5.5 V
OE = 0 V
SEL = 0 V to 5.5 V
Dn, CLKn = 0 V
0
30
60
µA
IDD_PD
Power-down Supply current
VDD = 1.65 V to 5.5 V
OE = VDD
SEL = 0 V to 5.5 V
Dn, CLKn = 0 V
0
0.1
1
µA
IDD_PD_1.8
Power-down Supply current
VDD = 1.65 V to 5.5 V
OE = 1.8 V
SEL = 0 V to 5.5 V
Dn, CLKn = 0 V
0
0.1
10
µA
DC CHARACTERISTICS
RON_HS
On-state resistance
VDD = 1.65 V to 5.5 V
OE = 0 V
Dn,CLKn = -8 mA, 0.2V
DAn, DBn, CLKAn, CLKBn = 0.2 V, -8 mA
2.45
5.5
Ω
RON_LP
On-state resistance
VDD = 1.65 V to 5.5 V
OE = 0 V
Dn, CLKn = -8 mA, 1.2V
DAn, DBn, CLKAn, CLKBn = 1.2 V, -8 mA
2.65
6.5
Ω
RON_flat_HS
On-state resistance flatness
VDD = 1.65 V to 5.5 V
OE = 0 V
Dn, CLKn = -8 mA, 0 V to 0.3 V
DAn, DBn, CLKAn, CLKBn = 0 V to 0.3 V,-8 mA
0.1
Ω
RON_flat_LP
On-state resistance flatness
VDD = 1.65 V to 5.5 V
OE = 0 V
Dn, CLKn = -8 mA, 0 V to 1.3 V
DAn, DBn, CLKAn, CLKBn = 0 V to 1.3 V, -8 mA
0.9
Ω
ΔRON_HS
On-state resistance match between+and -
paths
VDD = 1.65 V to 5.5 V
OE = 0 V
Dn, CLKn = -8 mA, 0.2 V
DAn, DBn, CLKAn, CLKBn = 0.2 V, -8 mA
0.1
Ω
ΔRON_LP
On-state resistance match between+and -
paths
VDD = 1.65 V to 5.5 V
OE = 0 V
Dn, CLKn = -8 mA, 1.2 V
DAn, DBn, CLKAn, CLKBn = 1.2 V, -8 mA
0.1
Ω
IOFF
Switch off leakage current
VDD = 0 V, 1.65 V to 5.5 V
OE = 0 V to 5.5 V
SEL= 0 V to 5.5 V
Dn, CLKn = 0 V to 1.3 V
DAn, DBn, CLKAn, CLKBn = 0 V to 1.3 V
-0.5
0.5
µA
ION
Switch on leakage current
VDD = 1.65 V to 5.5 V
OE = 0 V
SEL= 0 V to 5.5 V
Dn, CLKn = 0 V to 1.3 V
DAn, DBn, CLKAn, CLKBn = 0 V to 1.3 V
-0.5
0.5
µA
DYNAMIC CHARACTERISTICS
tSWITCH
Switching time between channels
VDD = 1.65 V to 5.5 V
OE = 0 V
Dn, CLKn = 0.6 V
DAn, DBn, CLKAn, CLKBn: RL=50 Ω, CL = 5 pF
1.5
µs
fSEL_MAX
Maximum toggling frequency for the SEL
line
VDD = 1.65 V to 5.5 V
Dn, CLKn = 0.6 V
DAn, DBn, CLKAn, CLKBn: RL= 50 Ω, CL=1 pF
100
kHz
tON_OE
Device enable time OE to switch on
VDD = 1.65 V to 5.5 V
Dn, CLKn = 0.6 V
DAn, DBn, CLKAn, CLKBn: RL= 50 Ω, CL= 1 pF
50
300
µs
tON_VDD
Device enable time VDD to switch on
VDD = 0 V to 1.65 V
Dn, CLKn = 0.6 V
DAn, DBn, CLKAn, CLKBn: RL= 50 Ω, CL= 1 pF
50
300
µs



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