5.7 Electrical Characteristics - TSD12C

At TA=25

℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <10 nA, across operating temperature range

12

V

VBRR

Breakdown

voltage

IIO = 10 mA, IO to GND and GND to IO

13.2

15.6

19

V

ILEAK

Reverse leakage

current

VIO = 12 V, IO to GND or GND to IO

5

10

nA

VCLAMP

Surge clamping

voltage, tp =

8/20 µs (2)

IPP = 1 A, IO to GND or GND to IO

18.5

V

IPP = 5 A, IO to GND or GND to IO

21

V

IPP = 15 A, IO to GND or GND to IO

26

V

TLP clamping

voltage, tp = 100

ns

IPP = 16 A, IO to GND or GND to IO

19.4

V

RDYN

Dynamic

resistance(3)

IO to GND

0.15

Ω

GND to IO

CL

Line capacitance VIO = 0 V; ƒ = 1 MHz, IO to GND

6.5

8

pF

(1)

Typical parameters are measured at 25

℃

(2)

Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5

(3)

Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A

TSD05C, TSD12C, TSD15C, TSD18C, TSD24C, TSD36C

SLVSH42C – JUNE 2023 – REVISED OCTOBER 2024

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