August 1992

S-BAND RADAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .500 2L SFL (S138)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

3:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

DESCRIPTION

The AM2931-110 is a high power silicon bipolar

NPN transistor specifically designed for S-Band

radar pulsed output and driver applications.

This device is capable of operation over a wide

range of pulse widths, duty cycles and tempera-

tures and can withstand a 3:1 output VSWR. Low

RF thermal resistance, refractory/gold metalliza-

tion, and computerized automatic wire bonding

techniques ensure high reliability and product con-

sistency (including phase characteristics).

The AM2931-110 is supplied in the BIGPAC

™ Her-

metic M etal/Ceramic package with i nternal

Input/Output matching circuitry, and is intended

for military and other high reliability applications.

PIN CONNECTION

BRANDING

2931-110

ORDER CODE

AM2931-110

= 25°C)

Symbol

Parameter

Value

Uni t

Power Dissipation*

≤ 100°C)

375

W

Device Current*

12

A

Collector-Supply Voltage*

48

V

Junction Temperature (Pulsed RF Operation)

250

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

0.40

°C/W

*Applies only to rated RF amplifier operation

AM2931-110

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/4