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D1NK80Z 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 D1NK80Z
상세설명  N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH??MOSFET
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

D1NK80Z 데이터시트(HTML) 3 Page - STMicroelectronics

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
800
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
13
16
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 0.5 A
0.8
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
160
26
6.7
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 640V
9.5
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 400 V, ID = 0.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 21)
8
30
22
55
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640V, ID = 1.0 A,
VGS = 10V
(see Figure 24)
7.7
1.4
4.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
1.0
5
A
A
VSD (1)
Forward On Voltage
ISD = 1.0 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 25°C
(see Figure 22)
365
802
4.4
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see Figure 22)
388
802.7
4.6
ns
nC
A



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