CSD17381F4 30-V N-Channel FemtoFET™ MOSFET

1 Features

• Ultra-low on-resistance

• Ultra-low Qg and Qgd

• Low threshold voltage

• Ultra-small footprint (0402 case size)

– 1.0 mm × 0.6 mm

• Ultra-low profile

– 0.36 mm height

• Integrated ESD protection diode

– Rated >4 kV HBM

– Rated >2 kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Single-cell battery applications

• Handheld and mobile applications

3 Description

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET

technology is designed and optimized to minimize the

footprint in many handheld and mobile applications.

This technology is capable of replacing standard

small signal MOSFETs while providing at least a 60%

reduction in footprint size.

.

1.00 mm

0.36 mm

0.60 mm

Typical Dimensions

.

.

.

.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-source voltage

30

V

Qg

Gate charge total (4.5 V)

1040

pC

Qgd

Gate charge gate-to-drain

133

pC

RDS(on) Drain-to-source on-resistance

VGS = 1.8 V

160

mΩ

VGS = 2.5 V

110

mΩ

VGS = 4.5 V

90

mΩ

VGS(th) Threshold voltage

0.85

V

.

Ordering Information

DEVICE(1)

QTY

MEDIA

PACKAGE

SHIP

CSD17381F4

3000

7-Inch

reel

Femto (0402) 1.0 mm

×0.6 mm SMD Lead

Less

Tape and

reel

CSD17381F4T

250

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated

VALUE

UNIT

VDS

Drain-to-source voltage

30

V

VGS

Gate-to-source voltage

12

V

ID

Continuous drain current, TA = 25°C(1)

3.1

A

IDM

Pulsed Drain Current, TA = 25°C(2)

12

A

IG

Continuous gate clamp current

35

mA

Pulsed gate clamp current(2)

350

PD

Power dissipation(1)

500

mW

ESD

Rating

Human body model (HBM)

4

kV

Charged device model (CDM)

2

kV

TJ,

Tstg

Operating junction and

storage temperature range

–55 to 150

°C

EAS

Avalanche energy, single pulse ID = 7.4 A,

L = 0.1 mH, RG = 25 Ω

2.7

mJ

(1)

Typical RθJA = 90°C/W on 1 inch2 (6.45 cm2), 2 oz.

(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4

PCB.

(2)

Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

D

S

G

Top View

CSD17381F4

SLPS411G – APRIL 2013 – REVISED JANUARY 2022

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.