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ESD441DPLR.B 데이터시트(PDF) 5 Page - Texas Instruments

부품명 ESD441DPLR.B
상세설명  ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package
PDF  15 Pages
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ESD441DPLR.B 데이터시트(HTML) 5 Page - Texas Instruments

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6.6 Electrical Characteristics
At TA=25
℃ (unless otherwise noted) (1)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
VRWM
Reverse stand-off
voltage
IIO <100 nA, across operating temperature range
5.5
V
ILEAK
Reverse leakage
current
VIO = 5.5 V, IO to GND
1
50
nA
VBR
Break-down
voltage
IIO = 1 mA, IO to GND
6
7
8
V
VFWD
Forward voltage
IIO = 1 mA, GND to IO
0.8
V
VHOLD
Holding voltage
(2)
TLP, IO to GND
6.2
V
VCLAMP
Clamping voltage
with TLP (2)
IPP = 1 A, TLP, IO to GND
6.3
V
IPP = 5 A, TLP, IO to GND
6.5
V
IPP = 16 A, TLP, IO to GND
7.6
V
IPP =16 A, TLP, GND to IO
3.8
V
Clamping voltage
with surge strike
(4)
IPP = 6 A, tp = 8/20 µs , IO to GND
7.6
V
RDYN
Dynamic
resistance (3)
IO to GND
0.1
Ω
GND to IO
0.16
CL
Line capacitance VIO = 0 V; ƒ = 1 MHz, Vpp = 30 mV, IO to GND
1
pF
(1)
Typical parameters are measured at 25
(2)
Transition line pulse with 100 ns width and 10 ns rise and fall time
(3)
Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A
(4)
Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5
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ESD441
SLVSH26A – APRIL 2023 – REVISED JUNE 2023
Copyright © 2023 Texas Instruments Incorporated
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Product Folder Links: ESD441



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