0

5

10

15

20

25

30

1E-2

1E-1

1E+0

1E+1

1E+2

VR(V)

IR(

µA)

Tj=50

°C

Tj=25

°C

Tj=100

°C

Fig. 2: Reverse leakage current versus reverse

voltage applied (typical values).

0

25

50

75

100

125

150

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

Tj(

°C)

IR(

µA)

VR=30V

Fig. 3: Reverse leakage current versus junction

temperature.

12

5

10

20

30

1

2

5

10

VR(V)

C(pF)

F=1MHz

Tj=25

°C

Fi g . 4: Junction capacitance versus reverse

voltage applied (typical values).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

0.01

0.10

1.00

tp(s)

Zth(j-a)/Rth(j-a)

T

tp

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 5: Relative variation of thermal impedance

junction to ambient versus pulse duration (epoxy

FR4 with recommended pad layout, e(Cu)=35

µm).

0

5

10

15

20

25

30

35

40

45

50

150

200

250

300

350

S(Cu) (mm )

Rth(j-a) (

°C/W)

P=0.25W

Fig. 6: Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy

printedcircuit board FR4, copper thickness:35

µm).

BAR 42/BAR 43, A, C, S

3/4