LP3981

SNVS159H – OCTOBER 2001 – REVISED JULY 2015

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2) (3)

MIN

MAX

UNIT

IN, EN

−0.3

6.5

V

OUT, OUT-SENSE

−0.3 to VIN + 0.3

6.5

V

Junction temperature

150

°C

Storage temperature, Tstg

−65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND pin.

(3)

If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V(ESD)

Electrostatic discharge

V

Machine model

±200

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

NOM

MAX

UNIT

VIN

2.7

6

V

VEN

0

VIN

V

Junction temperature

–40

125

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND pin.

6.4 Thermal Information

LP3981

THERMAL METRIC(1)

DGK (VSSOP)

NGC (WSON)

UNIT

8 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance, High K

177

56.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

67.7

76.8

°C/W

RθJB

Junction-to-board thermal resistance

97.4

30.9

°C/W

ψJT

Junction-to-top characterization parameter

10.8

3.3

°C/W

ψJB

Junction-to-board characterization parameter

96

31

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

10.7

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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