VDD

VSS

MUX508

A0

A1

A2

VEN

RS

VS

EN

S

GND

CL

1 nF

D

VOUT

VOUT

VEN

3 V

VOUT

QINJ = CL ×

VOUT

VDD

VSS

Copyright © 2016, Texas Instruments Incorporated

0 V

20

MUX508, MUX509

SBAS758C – JANUARY 2016 – REVISED SEPTEMBER 2016

www.ti.com

Product Folder Links: MUX508 MUX509

Submit Documentation Feedback

Copyright © 2016, Texas Instruments Incorporated

8.8 Charge Injection

The MUX50x have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and

PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate

signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is

denoted by the symbol QINJ. Figure 32 shows the setup used to measure charge injection.

Figure 32. Charge-Injection Measurement Setup